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AUIRF1018E Datasheet

AUIRF1018E Cover
DatasheetAUIRF1018E
File Size156.71 KB
Total Pages2
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts AUIRF1018E
Description MOSFET N-CH 60V 79A TO-220AB

AUIRF1018E - Infineon Technologies

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URL Link

AUIRF1018E

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

79A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

8.4mOhm @ 47A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

2290pF @ 50V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3