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BAS16WS-G3-18 Datasheet

BAS16WS-G3-18 Cover
DatasheetBAS16WS-G3-18
File Size85.76 KB
Total Pages4
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts BAS16WS-G3-18, BAS16WS-G3-08
Description DIODE GEN PURP 75V 250MA SOD323, DIODE GEN PURP 75V 250MA SOD323

BAS16WS-G3-18 - Vishay Semiconductor Diodes Division

BAS16WS-G3-18 Datasheet Page 1
BAS16WS-G3-18 Datasheet Page 2
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BAS16WS-G3-18 BAS16WS-G3-18 Vishay Semiconductor Diodes Division DIODE GEN PURP 75V 250MA SOD323 436

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BAS16WS-G3-08 BAS16WS-G3-08 Vishay Semiconductor Diodes Division DIODE GEN PURP 75V 250MA SOD323 14329

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BAS16WS-G3-18

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

75V

Current - Average Rectified (Io)

250mA

Voltage - Forward (Vf) (Max) @ If

1.25V @ 150mA

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

6ns

Current - Reverse Leakage @ Vr

1µA @ 75V

Capacitance @ Vr, F

2pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

SC-76, SOD-323

Supplier Device Package

SOD-323

Operating Temperature - Junction

-55°C ~ 150°C

BAS16WS-G3-08

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

75V

Current - Average Rectified (Io)

250mA

Voltage - Forward (Vf) (Max) @ If

1.25V @ 150mA

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

6ns

Current - Reverse Leakage @ Vr

1µA @ 75V

Capacitance @ Vr, F

2pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

SC-76, SOD-323

Supplier Device Package

SOD-323

Operating Temperature - Junction

-55°C ~ 150°C