Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BCR555E6433HTMA1 |
| File Size | 526 KB |
| Total Pages | 6 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BCR555E6433HTMA1, BCR555E6327HTSA1 |
| Description | TRANS PREBIAS PNP 300MW SOT23-3, TRANS PREBIAS PNP 0.33W SOT23-3 |
BCR555E6433HTMA1 - Infineon Technologies
The Products You May Be Interested In
 |
BCR555E6433HTMA1 | Infineon Technologies | TRANS PREBIAS PNP 300MW SOT23-3 | 433 More on Order |
|
BCR555E6327HTSA1 | Infineon Technologies | TRANS PREBIAS PNP 0.33W SOT23-3 | 15690 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 150MHz Power - Max 330mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 150MHz Power - Max 330mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |