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BD6563FV-LBE2 Datasheet

BD6563FV-LBE2 Cover
DatasheetBD6563FV-LBE2
File Size575.04 KB
Total Pages19
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts BD6563FV-LBE2, BD6562FV-LBE2
Description IC DVR IGBT/MOSFET 3CH 16SSOP, IC DVR IGBT/MOSFET 2CH 16SSOP

BD6563FV-LBE2 - Rohm Semiconductor

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URL Link

BD6563FV-LBE2

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Driven Configuration

Low-Side

Channel Type

Independent

Number of Drivers

3

Gate Type

IGBT, N-Channel, P-Channel MOSFET

Voltage - Supply

10V ~ 25V

Logic Voltage - VIL, VIH

-

Current - Peak Output (Source, Sink)

600mA, 600mA

Input Type

Non-Inverting

High Side Voltage - Max (Bootstrap)

-

Rise / Fall Time (Typ)

-

Operating Temperature

-25°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

16-LSSOP (0.173", 4.40mm Width)

Supplier Device Package

16-SSOP-B

BD6562FV-LBE2

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Driven Configuration

Low-Side

Channel Type

Independent

Number of Drivers

2

Gate Type

IGBT, N-Channel, P-Channel MOSFET

Voltage - Supply

10V ~ 25V

Logic Voltage - VIL, VIH

-

Current - Peak Output (Source, Sink)

600mA, 600mA

Input Type

Non-Inverting

High Side Voltage - Max (Bootstrap)

-

Rise / Fall Time (Typ)

-

Operating Temperature

-25°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

16-LSSOP (0.173", 4.40mm Width)

Supplier Device Package

16-SSOP-B