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BD810 Datasheet

BD810 Cover
DatasheetBD810
File Size89.2 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts BD810, BD810G, BD809G
Description TRANS PNP 80V 10A TO-220AB, TRANS PNP 80V 10A TO-220AB, TRANS NPN 80V 10A TO-220AB

BD810 - ON Semiconductor

BD810 Datasheet Page 1
BD810 Datasheet Page 2
BD810 Datasheet Page 3
BD810 Datasheet Page 4

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URL Link

BD810

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

10A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

1.1V @ 300mA, 3A

Current - Collector Cutoff (Max)

1mA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 4A, 2V

Power - Max

90W

Frequency - Transition

1.5MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

BD810G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

10A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

1.1V @ 300mA, 3A

Current - Collector Cutoff (Max)

1mA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 4A, 2V

Power - Max

90W

Frequency - Transition

1.5MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

BD809G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

10A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

1.1V @ 300mA, 3A

Current - Collector Cutoff (Max)

1mA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 4A, 2V

Power - Max

90W

Frequency - Transition

1.5MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB