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BDP950E6327HTSA1 Datasheet

BDP950E6327HTSA1 Cover
DatasheetBDP950E6327HTSA1
File Size532.21 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts BDP950E6327HTSA1, BDP948E6327HTSA1, BDP948E6433HTMA1
Description TRANS PNP 60V 3A SOT-223, TRANS PNP 45V 3A SOT-223, TRANS PNP 45V 3A SOT-223

BDP950E6327HTSA1 - Infineon Technologies

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URL Link

BDP950E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

500mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

85 @ 500mA, 1V

Power - Max

5W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4

BDP948E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

500mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

85 @ 500mA, 1V

Power - Max

5W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4

BDP948E6433HTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

500mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

85 @ 500mA, 1V

Power - Max

5W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4