Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BSC027N10NS5ATMA1 |
| File Size | 831.21 KB |
| Total Pages | 11 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BSC027N10NS5ATMA1 |
| Description | TRENCH >=100V |
BSC027N10NS5ATMA1 - Infineon Technologies
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BSC027N10NS5ATMA1 | Infineon Technologies | TRENCH >=100V | 504 More on Order |
URL Link
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.8V @ 146µA Gate Charge (Qg) (Max) @ Vgs 111nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8200pF @ 50V FET Feature - Power Dissipation (Max) 3W (Ta), 214W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSON-8-3 Package / Case 8-PowerTDFN |