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BSC205N10LS G Datasheet

BSC205N10LS G Cover
DatasheetBSC205N10LS G
File Size658.44 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSC205N10LS G
Description MOSFET N-CH 100V 45A TDSON-8

BSC205N10LS G - Infineon Technologies

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URL Link

BSC205N10LS G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

7.4A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

20.5mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

2.4V @ 43µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 50V

FET Feature

-

Power Dissipation (Max)

76W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN