Top

BSF077N06NT3GXUMA1 Datasheet

BSF077N06NT3GXUMA1 Cover
DatasheetBSF077N06NT3GXUMA1
File Size1,602.88 KB
Total Pages13
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSF077N06NT3GXUMA1
Description MOSFET N-CH 60V 13A WDSON-2

BSF077N06NT3GXUMA1 - Infineon Technologies

BSF077N06NT3GXUMA1 Datasheet Page 1
BSF077N06NT3GXUMA1 Datasheet Page 2
BSF077N06NT3GXUMA1 Datasheet Page 3
BSF077N06NT3GXUMA1 Datasheet Page 4
BSF077N06NT3GXUMA1 Datasheet Page 5
BSF077N06NT3GXUMA1 Datasheet Page 6
BSF077N06NT3GXUMA1 Datasheet Page 7
BSF077N06NT3GXUMA1 Datasheet Page 8
BSF077N06NT3GXUMA1 Datasheet Page 9
BSF077N06NT3GXUMA1 Datasheet Page 10
BSF077N06NT3GXUMA1 Datasheet Page 11
BSF077N06NT3GXUMA1 Datasheet Page 12
BSF077N06NT3GXUMA1 Datasheet Page 13

The Products You May Be Interested In

BSF077N06NT3GXUMA1 BSF077N06NT3GXUMA1 Infineon Technologies MOSFET N-CH 60V 13A WDSON-2 364

More on Order

URL Link

BSF077N06NT3GXUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 33µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3700pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta), 38W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MG-WDSON-2, CanPAK M™

Package / Case

3-WDSON