Top

BSP317PL6327HTSA1 Datasheet

BSP317PL6327HTSA1 Cover
DatasheetBSP317PL6327HTSA1
File Size77.08 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts BSP317PL6327HTSA1, BSP317PE6327T, BSP317PE6327
Description MOSFET P-CH 250V 0.43A SOT-223, MOSFET P-CH 250V 0.43A SOT223, MOSFET P-CH 250V 0.43A SOT223

BSP317PL6327HTSA1 - Infineon Technologies

BSP317PL6327HTSA1 Datasheet Page 1
BSP317PL6327HTSA1 Datasheet Page 2
BSP317PL6327HTSA1 Datasheet Page 3
BSP317PL6327HTSA1 Datasheet Page 4
BSP317PL6327HTSA1 Datasheet Page 5
BSP317PL6327HTSA1 Datasheet Page 6
BSP317PL6327HTSA1 Datasheet Page 7
BSP317PL6327HTSA1 Datasheet Page 8

The Products You May Be Interested In

BSP317PL6327HTSA1 BSP317PL6327HTSA1 Infineon Technologies MOSFET P-CH 250V 0.43A SOT-223 424

More on Order

BSP317PE6327T BSP317PE6327T Infineon Technologies MOSFET P-CH 250V 0.43A SOT223 566

More on Order

BSP317PE6327 BSP317PE6327 Infineon Technologies MOSFET P-CH 250V 0.43A SOT223 312

More on Order

URL Link

BSP317PL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

430mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4Ohm @ 430mA, 10V

Vgs(th) (Max) @ Id

2V @ 370µA

Gate Charge (Qg) (Max) @ Vgs

15.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

262pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

BSP317PE6327T

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

430mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4Ohm @ 430mA, 10V

Vgs(th) (Max) @ Id

2V @ 370µA

Gate Charge (Qg) (Max) @ Vgs

15.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

262pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

BSP317PE6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

430mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4Ohm @ 430mA, 10V

Vgs(th) (Max) @ Id

2V @ 370µA

Gate Charge (Qg) (Max) @ Vgs

15.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

262pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA