Datasheet | BSS119L6327HTSA1 |
File Size | 89.99 KB |
Total Pages | 8 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 6 part numbers |
Associated Parts | BSS119L6327HTSA1, BSS119 E7978, BSS119 E7796, BSS119 E6433, BSS119E6327, BSS119L6433HTMA1 |
Description | MOSFET N-CH 100V 170MA SOT-23, MOSFET N-CH 100V 170MA SOT-23, MOSFET N-CH 100V 170MA SOT-23, MOSFET N-CH 100V 170MA SOT-23, MOSFET N-CH 100V 170MA SOT-23 |
BSS119L6327HTSA1 - Infineon Technologies
The Products You May Be Interested In
BSS119L6327HTSA1 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 | 387 More on Order |
|
BSS119 E7978 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 | 447 More on Order |
|
BSS119 E7796 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 | 348 More on Order |
|
BSS119 E6433 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 | 406 More on Order |
|
BSS119E6327 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 | 507 More on Order |
|
BSS119L6433HTMA1 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 | 360 More on Order |
URL Link
Infineon Technologies Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V Vgs(th) (Max) @ Id 2.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 78pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Infineon Technologies Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V Vgs(th) (Max) @ Id 2.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 78pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Infineon Technologies Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V Vgs(th) (Max) @ Id 2.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 78pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Infineon Technologies Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V Vgs(th) (Max) @ Id 2.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 78pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Infineon Technologies Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V Vgs(th) (Max) @ Id 2.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 78pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Infineon Technologies Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V Vgs(th) (Max) @ Id 2.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 78pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |