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BSS816NW L6327 Datasheet

BSS816NW L6327 Cover
DatasheetBSS816NW L6327
File Size450.64 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSS816NW L6327
Description MOSFET N-CH 20V 1.4A SOT323

BSS816NW L6327 - Infineon Technologies

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URL Link

BSS816NW L6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 2.5V

Rds On (Max) @ Id, Vgs

160mOhm @ 1.4A, 2.5V

Vgs(th) (Max) @ Id

750mV @ 3.7µA

Gate Charge (Qg) (Max) @ Vgs

0.6nC @ 2.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

180pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT323-3

Package / Case

SC-70, SOT-323