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| Datasheet | BSS84AKV,115 |
| File Size | 1,426.98 KB |
| Total Pages | 17 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BSS84AKV,115, BSS84AKVL |
| Description | MOSFET 2P-CH 50V 0.17A SOT666, MOSFET P-CH 50V 180MA TO236AB |
BSS84AKV,115 - Nexperia
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BSS84AKV,115 | Nexperia | MOSFET 2P-CH 50V 0.17A SOT666 | 49282 More on Order |
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Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 170mA Rds On (Max) @ Id, Vgs 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 36pF @ 25V Power - Max 500mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SOT-666 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 36pF @ 25V FET Feature - Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |