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| Datasheet | BUK652R3-40C,127 |
| File Size | 496.11 KB |
| Total Pages | 16 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BUK652R3-40C,127 |
| Description | MOSFET N-CH 40V 120A TO220AB |
BUK652R3-40C,127 - NXP
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BUK652R3-40C,127 | NXP | MOSFET N-CH 40V 120A TO220AB | 422 More on Order |
URL Link
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.3mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 15100pF @ 25V FET Feature - Power Dissipation (Max) 306W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |