Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BUK652R7-30C,127 |
| File Size | 369.05 KB |
| Total Pages | 16 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BUK652R7-30C,127 |
| Description | MOSFET N-CH 30V 100A TO220AB |
BUK652R7-30C,127 - NXP
The Products You May Be Interested In
 |
BUK652R7-30C,127 | NXP | MOSFET N-CH 30V 100A TO220AB | 495 More on Order |
URL Link
www.zouser.com/datasheet/BUK652R7-30C,127
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 6960pF @ 25V FET Feature - Power Dissipation (Max) 204W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |