Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BUK7E11-55B,127 |
| File Size | 315.85 KB |
| Total Pages | 15 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BUK7E11-55B,127 |
| Description | MOSFET N-CH 55V 75A I2PAK |
BUK7E11-55B,127 - NXP
The Products You May Be Interested In
 |
BUK7E11-55B,127 | NXP | MOSFET N-CH 55V 75A I2PAK | 390 More on Order |
URL Link
www.zouser.com/datasheet/BUK7E11-55B,127
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2604pF @ 25V FET Feature - Power Dissipation (Max) 157W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |