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| Datasheet | BUK9506-55B,127 |
| File Size | 305.38 KB |
| Total Pages | 14 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BUK9506-55B,127, BUK9606-55B,118 |
| Description | MOSFET N-CH 55V 75A TO220AB, MOSFET N-CH 55V 75A D2PAK |
BUK9506-55B,127 - NXP
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BUK9506-55B,127 | NXP | MOSFET N-CH 55V 75A TO220AB | 623 More on Order |
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 7565pF @ 25V FET Feature - Power Dissipation (Max) 258W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 5.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 7565pF @ 25V FET Feature - Power Dissipation (Max) 258W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |