Datasheet | BUK98180-100A,115 |
File Size | 711.85 KB |
Total Pages | 12 |
Manufacturer | NXP |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | BUK98180-100A,115, BUK98180-100A/CUX |
Description | MOSFET N-CH 100V 4.6A SOT-223, MOSFET N-CH 100V 4.6A SOT223 |
BUK98180-100A,115 - NXP
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Manufacturer NXP USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 173mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 619pF @ 25V FET Feature - Power Dissipation (Max) 8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Nexperia Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 173mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 619pF @ 25V FET Feature - Power Dissipation (Max) 8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-73 Package / Case TO-261-4, TO-261AA |