Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BYV29F-600,127 |
| File Size | 416.45 KB |
| Total Pages | 11 |
| Manufacturer | WeEn Semiconductors |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BYV29F-600,127, BYV29-600,127 |
| Description | DIODE GEN PURP 600V 9A TO220AC, DIODE GEN PURP 600V 9A TO220AC |
BYV29F-600,127 - WeEn Semiconductors
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Manufacturer WeEn Semiconductors Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 9A Voltage - Forward (Vf) (Max) @ If 1.9V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 50µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 150°C (Max) |
Manufacturer WeEn Semiconductors Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 9A Voltage - Forward (Vf) (Max) @ If 1.25V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 60ns Current - Reverse Leakage @ Vr 50µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 150°C (Max) |