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BYV30B-600PJ Datasheet

BYV30B-600PJ Cover
DatasheetBYV30B-600PJ
File Size266.75 KB
Total Pages10
ManufacturerWeEn Semiconductors
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts BYV30B-600PJ
Description DIODE GEN PURP 600V 30A D2PAK

BYV30B-600PJ - WeEn Semiconductors

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URL Link

BYV30B-600PJ

WeEn Semiconductors

Manufacturer

WeEn Semiconductors

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

1.55V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

10µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Operating Temperature - Junction

175°C (Max)