Datasheet | CLS03,LNITTOQ(O |
File Size | 218.92 KB |
Total Pages | 5 |
Manufacturer | Toshiba Semiconductor and Storage |
Website | http://www.toshiba.com/taec/ |
Total Parts | This datasheet covers 8 part numbers |
Associated Parts | CLS03,LNITTOQ(O, CLS03(TE16R,Q), CLS03(TE16L,SQC,Q), CLS03(TE16L,PSD,Q), CLS03(TE16L,PCD,Q), CLS03(TE16L,DNSO,Q, CLS03(T6L,SHINA,Q), CLS03(T6L,CANO-O,Q |
Description | DIODE SCHOTTKY 60V 10A L-FLAT, DIODE SCHOTTKY 60V 10A L-FLAT, DIODE SCHOTTKY 60V 10A L-FLAT, DIODE SCHOTTKY 60V 10A L-FLAT, DIODE SCHOTTKY 60V 10A L-FLAT |
CLS03,LNITTOQ(O - Toshiba Semiconductor and Storage
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Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |