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CPH3360-TL-W Datasheet

CPH3360-TL-W Cover
DatasheetCPH3360-TL-W
File Size678.87 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts CPH3360-TL-W, CPH3360-TL-H
Description MOSFET P-CH 30V 1.6A CPH3, MOSFET P-CH 30V 1.6A CPH3

CPH3360-TL-W - ON Semiconductor

CPH3360-TL-W Datasheet Page 1
CPH3360-TL-W Datasheet Page 2
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CPH3360-TL-W Datasheet Page 4
CPH3360-TL-W Datasheet Page 5

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URL Link

CPH3360-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

303mOhm @ 800mA, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

82pF @ 10V

FET Feature

-

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-CPH

Package / Case

TO-236-3, SC-59, SOT-23-3

CPH3360-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

303mOhm @ 800mA, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

2.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

82pF @ 10V

FET Feature

-

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-CPH

Package / Case

TO-236-3, SC-59, SOT-23-3