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CY7C1471BV25-133AXCT Datasheet

CY7C1471BV25-133AXCT Cover
DatasheetCY7C1471BV25-133AXCT
File Size982.89 KB
Total Pages30
ManufacturerCypress Semiconductor
Websitehttp://www.cypress.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts CY7C1471BV25-133AXCT, CY7C1471BV25-133AXC, CY7C1471V25-133AXCT, CY7C1471V25-133AXC
Description IC SRAM 72M PARALLEL 100TQFP, IC SRAM 72M PARALLEL 100TQFP, IC SRAM 72M PARALLEL 100TQFP, IC SRAM 72M PARALLEL 100TQFP

CY7C1471BV25-133AXCT - Cypress Semiconductor

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URL Link

CY7C1471BV25-133AXCT

Cypress Semiconductor

Manufacturer

Cypress Semiconductor Corp

Series

NoBL™

Memory Type

Volatile

Memory Format

SRAM

Technology

SRAM - Synchronous, SDR

Memory Size

72Mb (2M x 36)

Memory Interface

Parallel

Clock Frequency

133MHz

Write Cycle Time - Word, Page

-

Access Time

6.5ns

Voltage - Supply

2.375V ~ 2.625V

Operating Temperature

0°C ~ 70°C (TA)

Mounting Type

Surface Mount

Package / Case

100-LQFP

Supplier Device Package

100-TQFP (14x20)

CY7C1471BV25-133AXC

Cypress Semiconductor

Manufacturer

Cypress Semiconductor Corp

Series

NoBL™

Memory Type

Volatile

Memory Format

SRAM

Technology

SRAM - Synchronous, SDR

Memory Size

72Mb (2M x 36)

Memory Interface

Parallel

Clock Frequency

133MHz

Write Cycle Time - Word, Page

-

Access Time

6.5ns

Voltage - Supply

2.375V ~ 2.625V

Operating Temperature

0°C ~ 70°C (TA)

Mounting Type

Surface Mount

Package / Case

100-LQFP

Supplier Device Package

100-TQFP (14x20)

CY7C1471V25-133AXCT

Cypress Semiconductor

Manufacturer

Cypress Semiconductor Corp

Series

NoBL™

Memory Type

Volatile

Memory Format

SRAM

Technology

SRAM - Synchronous, SDR

Memory Size

72Mb (2M x 36)

Memory Interface

Parallel

Clock Frequency

133MHz

Write Cycle Time - Word, Page

-

Access Time

6.5ns

Voltage - Supply

2.375V ~ 2.625V

Operating Temperature

0°C ~ 70°C (TA)

Mounting Type

Surface Mount

Package / Case

100-LQFP

Supplier Device Package

100-TQFP (14x20)

CY7C1471V25-133AXC

Cypress Semiconductor

Manufacturer

Cypress Semiconductor Corp

Series

NoBL™

Memory Type

Volatile

Memory Format

SRAM

Technology

SRAM - Synchronous, SDR

Memory Size

72Mb (2M x 36)

Memory Interface

Parallel

Clock Frequency

133MHz

Write Cycle Time - Word, Page

-

Access Time

6.5ns

Voltage - Supply

2.375V ~ 2.625V

Operating Temperature

0°C ~ 70°C (TA)

Mounting Type

Surface Mount

Package / Case

100-LQFP

Supplier Device Package

100-TQFP (14x20)