Semiconductors
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| Datasheet | D5810N06TVFXPSA1 |
| File Size | 239.61 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | D5810N06TVFXPSA1, D5810N04TVFXPSA1 |
| Description | DIODE GEN PURP 600V 5800A, DIODE GEN PURP 400V 5800A |
D5810N06TVFXPSA1 - Infineon Technologies
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D5810N06TVFXPSA1 | Infineon Technologies | DIODE GEN PURP 600V 5800A | 162 More on Order |
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D5810N04TVFXPSA1 | Infineon Technologies | DIODE GEN PURP 400V 5800A | 522 More on Order |
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 5800A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100mA @ 600V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AC, K-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 5800A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100mA @ 400V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AC, K-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |