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| Datasheet | DDB6U215N16LHOSA1 |
| File Size | 66.27 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DDB6U215N16LHOSA1 |
| Description | DIODE MODULE GP 1600V |
DDB6U215N16LHOSA1 - Infineon Technologies
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DDB6U215N16LHOSA1 | Infineon Technologies | DIODE MODULE GP 1600V | 364 More on Order |
URL Link
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Manufacturer Infineon Technologies Series - Diode Configuration 3 Independent Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1600V Current - Average Rectified (Io) (per Diode) - Voltage - Forward (Vf) (Max) @ If 1.61V @ 300A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10mA @ 1600V Operating Temperature - Junction -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |