Datasheet | DDTC114GCA-7 |
File Size | 117.74 KB |
Total Pages | 5 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 8 part numbers |
Associated Parts | DDTC114GCA-7, DDTC124GCA-7-F, DDTC114GCA-7-F, DDTC115GCA-7-F, DDTC144GCA-7, DDTC115GCA-7, DDTC124GCA-7, DDTC144GCA-7-F |
Description | TRANS PREBIAS NPN 200MW SOT23-3, TRANS PREBIAS NPN 200MW SOT23-3, TRANS PREBIAS NPN 200MW SOT23-3, TRANS PREBIAS NPN 200MW SOT23-3, TRANS PREBIAS NPN 200MW SOT23-3 |
DDTC114GCA-7 - Diodes Incorporated
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DDTC114GCA-7 | Diodes Incorporated | TRANS PREBIAS NPN 200MW SOT23-3 | 376 More on Order |
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DDTC124GCA-7-F | Diodes Incorporated | TRANS PREBIAS NPN 200MW SOT23-3 | 456 More on Order |
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DDTC114GCA-7-F | Diodes Incorporated | TRANS PREBIAS NPN 200MW SOT23-3 | 245 More on Order |
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DDTC115GCA-7-F | Diodes Incorporated | TRANS PREBIAS NPN 200MW SOT23-3 | 478 More on Order |
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DDTC144GCA-7 | Diodes Incorporated | TRANS PREBIAS NPN 200MW SOT23-3 | 592 More on Order |
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DDTC115GCA-7 | Diodes Incorporated | TRANS PREBIAS NPN 200MW SOT23-3 | 266 More on Order |
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DDTC124GCA-7 | Diodes Incorporated | TRANS PREBIAS NPN 200MW SOT23-3 | 325 More on Order |
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DDTC144GCA-7-F | Diodes Incorporated | TRANS PREBIAS NPN 200MW SOT23-3 | 362 More on Order |
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Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) - Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) - Resistor - Emitter Base (R2) 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) - Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) - Resistor - Emitter Base (R2) 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) - Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) - Resistor - Emitter Base (R2) 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) - Resistor - Emitter Base (R2) 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) - Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |