Datasheet | DDTD143TC-7-F |
File Size | 74.59 KB |
Total Pages | 4 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 12 part numbers |
Associated Parts | DDTD143TC-7-F, DDTD143EC-7-F, DDTD123EC-7-F, DDTD122JC-7-F, DDTD114TC-7-F, DDTD114GC-7-F, DDTD114EC-7-F, DDTD113EC-7-F, DDTD133HC-7-F, DDTD123YC-7-F, DDTD123TC-7-F, DDTD113ZC-7-F |
Description | TRANS PREBIAS NPN 200MW SOT23-3, TRANS PREBIAS NPN 200MW SOT23-3, TRANS PREBIAS NPN 200MW SOT23-3, TRANS PREBIAS NPN 200MW SOT23-3, TRANS PREBIAS NPN 200MW SOT23-3 |
DDTD143TC-7-F - Diodes Incorporated
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Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 39 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 220 Ohms Resistor - Emitter Base (R2) 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) - Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 1 kOhms Resistor - Emitter Base (R2) 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 3.3 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 1 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |