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DMG4511SK4-13 Datasheet

DMG4511SK4-13 Cover
DatasheetDMG4511SK4-13
File Size196.38 KB
Total Pages9
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DMG4511SK4-13
Description MOSFET N/P-CH 35V TO252-4L

DMG4511SK4-13 - Diodes Incorporated

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URL Link

DMG4511SK4-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N and P-Channel, Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

35V

Current - Continuous Drain (Id) @ 25°C

5.3A, 5A

Rds On (Max) @ Id, Vgs

35mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 25V

Power - Max

1.54W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Supplier Device Package

TO-252-4L