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DMG4N60SCT Datasheet

DMG4N60SCT Cover
DatasheetDMG4N60SCT
File Size201.7 KB
Total Pages6
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DMG4N60SCT
Description MOSFET NCH 600V 4.5A TO220

DMG4N60SCT - Diodes Incorporated

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URL Link

DMG4N60SCT

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14.3nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

532pF @ 25V

FET Feature

-

Power Dissipation (Max)

113W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3