Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | DMG4N60SJ3 |
| File Size | 396.39 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMG4N60SJ3 |
| Description | MOSFET NCH 600V 3A TO251 |
DMG4N60SJ3 - Diodes Incorporated
The Products You May Be Interested In
 |
DMG4N60SJ3 | Diodes Incorporated | MOSFET NCH 600V 3A TO251 | 214 More on Order |
URL Link
www.zouser.com/datasheet/DMG4N60SJ3
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.3nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 532pF @ 25V FET Feature - Power Dissipation (Max) 41W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |