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| Datasheet | DMG4N60SK3-13 |
| File Size | 375.59 KB |
| Total Pages | 8 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMG4N60SK3-13 |
| Description | MOSFET BVDSS: 501V 650V TO252 T& |
DMG4N60SK3-13 - Diodes Incorporated
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URL Link
www.zouser.com/datasheet/DMG4N60SK3-13
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.3Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.3nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 532pF @ 25V FET Feature - Power Dissipation (Max) 48W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |