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DMG6601LVT-7 Datasheet

DMG6601LVT-7 Cover
DatasheetDMG6601LVT-7
File Size382.59 KB
Total Pages9
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DMG6601LVT-7
Description MOSFET N/P-CH 30V 26TSOT

DMG6601LVT-7 - Diodes Incorporated

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URL Link

DMG6601LVT-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.8A, 2.5A

Rds On (Max) @ Id, Vgs

55mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

422pF @ 15V

Power - Max

850mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

TSOT-26