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DMG6602SVTQ-7 Datasheet

DMG6602SVTQ-7 Cover
DatasheetDMG6602SVTQ-7
File Size395.66 KB
Total Pages10
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DMG6602SVTQ-7
Description MOSFET N/P-CH 30V TSOT26

DMG6602SVTQ-7 - Diodes Incorporated

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DMG6602SVTQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.4A, 2.8A

Rds On (Max) @ Id, Vgs

60mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 15V

Power - Max

840mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

TSOT-26