Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | DMG7401SFGQ-13 |
| File Size | 464.05 KB |
| Total Pages | 8 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMG7401SFGQ-13, DMG7401SFGQ-7 |
| Description | MOSFET P-CH 30V 9.8A POWERDI3333, MOSFET P-CH 30V 9.8A PWRDI3333-8 |
DMG7401SFGQ-13 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 20V Rds On (Max) @ Id, Vgs 11mOhm @ 12A, 20V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2987pF @ 15V FET Feature - Power Dissipation (Max) 940mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |
Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 20V Rds On (Max) @ Id, Vgs 11mOhm @ 12A, 20V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2987pF @ 15V FET Feature - Power Dissipation (Max) 940mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |