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| Datasheet | DMN1008UFDF-7 |
| File Size | 524.72 KB |
| Total Pages | 8 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN1008UFDF-7, DMN1008UFDF-13 |
| Description | MOSFET N-CH30V SC-59, MOSFET N-CH30V SC-59 |
DMN1008UFDF-7 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 12.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 8mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23.4nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 995pF @ 6V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type F) Package / Case 6-UDFN Exposed Pad |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 12.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 8mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23.4nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 995pF @ 6V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type F) Package / Case 6-UDFN Exposed Pad |