Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | DMN13H750S-13 |
| File Size | 604.81 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN13H750S-13, DMN13H750S-7 |
| Description | MOSFET N-CH 130V 1A SOT23, MOSFET N-CH 130V 1A SOT23 |
DMN13H750S-13 - Diodes Incorporated
The Products You May Be Interested In
 |
DMN13H750S-13 | Diodes Incorporated | MOSFET N-CH 130V 1A SOT23 | 601 More on Order |
 |
DMN13H750S-7 | Diodes Incorporated | MOSFET N-CH 130V 1A SOT23 | 9637 More on Order |
URL Link
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 130V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 750mOhm @ 2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 231pF @ 25V FET Feature - Power Dissipation (Max) 770mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 130V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 750mOhm @ 2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 231pF @ 25V FET Feature - Power Dissipation (Max) 770mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |