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| Datasheet | DMN2029USD-13 |
| File Size | 265.69 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMN2029USD-13 |
| Description | MOSFET 2N-CH 20V 5.8A 8SO |
DMN2029USD-13 - Diodes Incorporated
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DMN2029USD-13 | Diodes Incorporated | MOSFET 2N-CH 20V 5.8A 8SO | 480 More on Order |
URL Link
www.zouser.com/datasheet/DMN2029USD-13
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Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.8A Rds On (Max) @ Id, Vgs 25mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 1171pF @ 10V Power - Max 1.2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |