Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | DMN2056U-13 |
| File Size | 327.61 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN2056U-13, DMN2056U-7 |
| Description | MOSFET N-CHANNEL 20V 4A SOT23-3, MOSFET N-CHANNEL 20V 4A SOT23-3 |
DMN2056U-13 - Diodes Incorporated
The Products You May Be Interested In
 |
DMN2056U-13 | Diodes Incorporated | MOSFET N-CHANNEL 20V 4A SOT23-3 | 494 More on Order |
 |
DMN2056U-7 | Diodes Incorporated | MOSFET N-CHANNEL 20V 4A SOT23-3 | 3900 More on Order |
URL Link
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 38mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 339pF @ 10V FET Feature - Power Dissipation (Max) 940mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 38mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 339pF @ 10V FET Feature - Power Dissipation (Max) 940mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |