Datasheet | DMN3030LFG-7 |
File Size | 272.34 KB |
Total Pages | 6 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | DMN3030LFG-7 |
Description | MOSFET N-CH 30V PWRDI3333-8 |
DMN3030LFG-7 - Diodes Incorporated
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DMN3030LFG-7 | Diodes Incorporated | MOSFET N-CH 30V PWRDI3333-8 | 206 More on Order |
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Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 18mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 751pF @ 10V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |