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DMN3032LE-13 Datasheet

DMN3032LE-13 Cover
DatasheetDMN3032LE-13
File Size321.15 KB
Total Pages6
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DMN3032LE-13
Description MOSFET N-CH 30V 5.6A SOT223

DMN3032LE-13 - Diodes Incorporated

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DMN3032LE-13 DMN3032LE-13 Diodes Incorporated MOSFET N-CH 30V 5.6A SOT223 3292

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URL Link

DMN3032LE-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

29mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

498pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA