Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | DMN3033LSNQ-13 |
| File Size | 424.01 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN3033LSNQ-13, DMN3033LSNQ-7 |
| Description | MOSFET N-CH 30V 6A SC59-3, MOSFET N-CH 30V 6A SC59-3 |
DMN3033LSNQ-13 - Diodes Incorporated
The Products You May Be Interested In
 |
DMN3033LSNQ-13 | Diodes Incorporated | MOSFET N-CH 30V 6A SC59-3 | 318 More on Order |
 |
DMN3033LSNQ-7 | Diodes Incorporated | MOSFET N-CH 30V 6A SC59-3 | 4553 More on Order |
URL Link
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 755pF @ 10V FET Feature - Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-59 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 755pF @ 10V FET Feature - Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-59 Package / Case TO-236-3, SC-59, SOT-23-3 |