Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | DMN53D0U-13 |
| File Size | 337.93 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN53D0U-13, DMN53D0U-7 |
| Description | MOSFET N-CH 50V 0.3A SOT23, MOSFET N-CH 50V 0.3A SOT23 |
DMN53D0U-13 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 37.1pF @ 25V FET Feature - Power Dissipation (Max) 520mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 37.1pF @ 25V FET Feature - Power Dissipation (Max) 520mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |