Datasheet | DMN55D0UT-7 |
File Size | 439.46 KB |
Total Pages | 7 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | DMN55D0UT-7, DMN55D0UTQ-7 |
Description | MOSFET N-CH 50V 160MA SOT-523, MOSFET N-CH 50V 160MA SOT-523 |
DMN55D0UT-7 - Diodes Incorporated
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DMN55D0UT-7 | Diodes Incorporated | MOSFET N-CH 50V 160MA SOT-523 | 420 More on Order |
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DMN55D0UTQ-7 | Diodes Incorporated | MOSFET N-CH 50V 160MA SOT-523 | 4642 More on Order |
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Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 4Ohm @ 100mA, 4V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-523 Package / Case SOT-523 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 4Ohm @ 100mA, 4V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-523 Package / Case SOT-523 |