Semiconductors
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| Datasheet | DMN6069SFGQ-7 |
| File Size | 521.71 KB |
| Total Pages | 8 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN6069SFGQ-7, DMN6069SFGQ-13 |
| Description | MOSFET N-CH 60V 18A POWERDI3333, MOSFET N-CH 60V 18A POWERDI3333 |
DMN6069SFGQ-7 - Diodes Incorporated
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DMN6069SFGQ-7 | Diodes Incorporated | MOSFET N-CH 60V 18A POWERDI3333 | 444 More on Order |
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DMN6069SFGQ-13 | Diodes Incorporated | MOSFET N-CH 60V 18A POWERDI3333 | 577 More on Order |
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 50mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1480pF @ 30V FET Feature - Power Dissipation (Max) 2.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 50mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1480pF @ 30V FET Feature - Power Dissipation (Max) 2.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |