Semiconductors
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| Datasheet | DMN61D8LVT-13 |
| File Size | 471.86 KB |
| Total Pages | 9 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | DMN61D8LVT-13, DMN61D8LVT-7, DMN61D8L-13, DMN61D8L-7 |
| Description | MOSFET 2N-CH 60V 0.63A TSOT26, MOSFET 2N-CH 60V 0.63A TSOT26, MOSFET N-CH 60V 0.47A SOT23, MOSFET N-CH 60V 0.47A SOT23 |
DMN61D8LVT-13 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 630mA Rds On (Max) @ Id, Vgs 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 12.9pF @ 12V Power - Max 820mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package TSOT-26 |
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 630mA Rds On (Max) @ Id, Vgs 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 12.9pF @ 12V Power - Max 820mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package TSOT-26 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 470mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 3V, 5V Rds On (Max) @ Id, Vgs 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 12.9pF @ 12V FET Feature - Power Dissipation (Max) 390mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 470mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 3V, 5V Rds On (Max) @ Id, Vgs 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 12.9pF @ 12V FET Feature - Power Dissipation (Max) 390mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |