Datasheet | DMN61D8LVTQ-13 |
File Size | 344.19 KB |
Total Pages | 7 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | DMN61D8LVTQ-13, DMN61D8LVTQ-7 |
Description | MOSFET 2N-CH 60V 0.63A TSOT26, MOSFET 2N-CH 60V 0.63A TSOT26 |
DMN61D8LVTQ-13 - Diodes Incorporated
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DMN61D8LVTQ-13 | Diodes Incorporated | MOSFET 2N-CH 60V 0.63A TSOT26 | 267 More on Order |
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DMN61D8LVTQ-7 | Diodes Incorporated | MOSFET 2N-CH 60V 0.63A TSOT26 | 503 More on Order |
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Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 630mA Rds On (Max) @ Id, Vgs 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 12.9pF @ 12V Power - Max 820mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package TSOT-26 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 630mA Rds On (Max) @ Id, Vgs 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 12.9pF @ 12V Power - Max 820mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package TSOT-26 |