Datasheet | DMN61D9UW-13 |
File Size | 480.13 KB |
Total Pages | 6 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | DMN61D9UW-13, DMN61D9UW-7 |
Description | MOSFET N-CH 60V 0.34A SOT323, MOSFET N-CH 60V 0.34A |
DMN61D9UW-13 - Diodes Incorporated
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DMN61D9UW-13 | Diodes Incorporated | MOSFET N-CH 60V 0.34A SOT323 | 338 More on Order |
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DMN61D9UW-7 | Diodes Incorporated | MOSFET N-CH 60V 0.34A | 8888 More on Order |
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Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 28.5pF @ 30V FET Feature - Power Dissipation (Max) 320mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-323 Package / Case SC-70, SOT-323 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 28.5pF @ 30V FET Feature - Power Dissipation (Max) 320mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-323 Package / Case SC-70, SOT-323 |