Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | DMN63D8L-13 |
| File Size | 535.83 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN63D8L-13, DMN63D8L-7 |
| Description | MOSFET N-CH 30V 0.35A SOT23, MOSFET N-CH 30V 0.35A SOT23 |
DMN63D8L-13 - Diodes Incorporated
The Products You May Be Interested In
 |
DMN63D8L-13 | Diodes Incorporated | MOSFET N-CH 30V 0.35A SOT23 | 275 More on Order |
 |
DMN63D8L-7 | Diodes Incorporated | MOSFET N-CH 30V 0.35A SOT23 | 14916 More on Order |
URL Link
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 2.8Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 23.2pF @ 25V FET Feature - Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 2.8Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 23.2pF @ 25V FET Feature - Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |