Datasheet | DMN95H8D5HCT |
File Size | 347.1 KB |
Total Pages | 7 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | DMN95H8D5HCT |
Description | MOSFET N-CH 950V 2.5A TO220AB |
DMN95H8D5HCT - Diodes Incorporated
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DMN95H8D5HCT | Diodes Incorporated | MOSFET N-CH 950V 2.5A TO220AB | 570 More on Order |
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Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 950V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7Ohm @ 1A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |