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| Datasheet | DMP25H18DLFDE-13 |
| File Size | 247.38 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMP25H18DLFDE-13, DMP25H18DLFDE-7 |
| Description | MOSFET P-CH 250V 0.26A DFN2020-6, MOSFET P-CH 250V 0.26A DFN2020-6 |
DMP25H18DLFDE-13 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 3.5V, 10V Rds On (Max) @ Id, Vgs 14Ohm @ 200mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 10V Vgs (Max) ±40V Input Capacitance (Ciss) (Max) @ Vds 81pF @ 25V FET Feature - Power Dissipation (Max) 600mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type E) Package / Case 6-UDFN Exposed Pad |
Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 3.5V, 10V Rds On (Max) @ Id, Vgs 14Ohm @ 200mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 10V Vgs (Max) ±40V Input Capacitance (Ciss) (Max) @ Vds 81pF @ 25V FET Feature - Power Dissipation (Max) 600mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type E) Package / Case 6-UDFN Exposed Pad |